DiodesZetex Type N-Channel MOSFET, 59 A, 100 V Enhancement, 3-Pin TO-252 DMTH10H015SK3-13
- RS Stock No.:
- 246-7561
- Mfr. Part No.:
- DMTH10H015SK3-13
- Manufacturer:
- DiodesZetex
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 10 units)*
TWD494.00
(exc. GST)
TWD518.70
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 2,490 unit(s) shipping from January 26, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | TWD49.40 | TWD494.00 |
| 50 - 90 | TWD48.10 | TWD481.00 |
| 100 - 240 | TWD47.10 | TWD471.00 |
| 250 - 990 | TWD46.00 | TWD460.00 |
| 1000 + | TWD44.90 | TWD449.00 |
*price indicative
- RS Stock No.:
- 246-7561
- Mfr. Part No.:
- DMTH10H015SK3-13
- Manufacturer:
- DiodesZetex
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 59A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.014Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.73W | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 6.58mm | |
| Height | 2.29mm | |
| Width | 6.1 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 59A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.014Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.73W | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 6.58mm | ||
Height 2.29mm | ||
Width 6.1 mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex makes an N-channel enhancement mode MOSFET, it has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in TO252 packaging. It offers fast switching and high efficiency. It is rated to +175°C and ideal for high ambient temperature environments. Its 100% unclamped inductive switching ensures more reliable and robust end application.
Maximum drain to source voltage is 100 V and maximum gate to source voltage is ±20 V Its low RDS(ON) helps to minimize power losses Its low Qg helps to minimizes switching losses
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