Infineon iPB Type N-Channel MOSFET, 100 A, 120 V Enhancement TO-263 IPB100N12S305ATMA1
- RS Stock No.:
- 258-3796
- Mfr. Part No.:
- IPB100N12S305ATMA1
- Manufacturer:
- Infineon
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Subtotal (1 unit)*
TWD107.00
(exc. GST)
TWD112.35
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 830 unit(s) shipping from January 26, 2026
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Units | Per unit |
|---|---|
| 1 - 9 | TWD107.00 |
| 10 - 99 | TWD94.00 |
| 100 - 249 | TWD92.00 |
| 250 - 499 | TWD89.00 |
| 500 + | TWD87.00 |
*price indicative
- RS Stock No.:
- 258-3796
- Mfr. Part No.:
- IPB100N12S305ATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Series | iPB | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 4.8mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 139nC | |
| Maximum Power Dissipation Pd | 300W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 120V | ||
Series iPB | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 4.8mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 139nC | ||
Maximum Power Dissipation Pd 300W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS-T power-transistor is N-channel normal level enhancement mode. It has 175°C operating temperature.
AEC qualified
MSL1 up to 260°C peak reflow
Related links
- Infineon iPB Type N-Channel MOSFET 120 V Enhancement TO-263
- Infineon iPB Type N-Channel MOSFET 40 V Enhancement TO-263
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- Infineon iPB Type N-Channel MOSFET 40 V Enhancement TO-263
- Infineon iPB Type N-Channel MOSFET, 120 A Enhancement TO-263
- Infineon iPB Type N-Channel MOSFET 100 V Enhancement TO-263
- Infineon iPB Type N-Channel MOSFET 40 V Enhancement TO-263 IPB120N04S402ATMA1
- Infineon iPB Type N-Channel MOSFET, 120 A Enhancement TO-263 IPB120N06S403ATMA2