Infineon IPA Type N-Channel MOSFET, 5.7 A, 800 V N, 3-Pin TO-220 IPA80R1K0CEXKSA2
- RS Stock No.:
- 258-3776
- Mfr. Part No.:
- IPA80R1K0CEXKSA2
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 2 units)*
TWD80.00
(exc. GST)
TWD84.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 494 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | TWD40.00 | TWD80.00 |
| 10 - 18 | TWD38.00 | TWD76.00 |
| 20 - 28 | TWD35.50 | TWD71.00 |
| 30 - 38 | TWD33.00 | TWD66.00 |
| 40 + | TWD30.50 | TWD61.00 |
*price indicative
- RS Stock No.:
- 258-3776
- Mfr. Part No.:
- IPA80R1K0CEXKSA2
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5.7A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-220 | |
| Series | IPA | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 950mΩ | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Maximum Power Dissipation Pd | 32W | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5.7A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-220 | ||
Series IPA | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 950mΩ | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Maximum Power Dissipation Pd 32W | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon 800V CoolMOS CE is high performance device family offering 800 volts break down voltage. The CE targets consumer electronics applications as well as lighting. The new 800V selection series specifically aims at LED applications. With this specific CoolMOS family, Infineon combines long experience as the leading super junction MOSFET supplier with best-in-class innovation.
Low specific on-state resistance
Very low energy storage in output capacitance @ 400V
High reliability
Ease-of-use
Related links
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