Infineon IPA Type N-Channel MOSFET, 84 A, 40 V N, 3-Pin TO-220
- RS Stock No.:
- 242-0985
- Mfr. Part No.:
- IPA80R1K2P7XKSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tube of 500 units)*
TWD11,500.00
(exc. GST)
TWD12,075.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from October 06, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 500 - 500 | TWD23.00 | TWD11,500.00 |
| 1000 - 1000 | TWD22.50 | TWD11,250.00 |
| 1500 + | TWD21.90 | TWD10,950.00 |
*price indicative
- RS Stock No.:
- 242-0985
- Mfr. Part No.:
- IPA80R1K2P7XKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 84A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-220 | |
| Series | IPA | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.9mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 81W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 84A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-220 | ||
Series IPA | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.9mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 81W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon N-channel MOSFET provide a maximum continous drain current is 4.5 A and drain source voltage is 800 V. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. The operating temperature of MOSFET is ranges from -55 °C to 150 °C.
Best-in-class performance.
Enabling higher power density designs
BOM savings and lower assembly costs
Easy to drive and to parallel
Better production yield by reducing ESD related failures
Less production issues and reduced field returns
Easy to select right parts for fine tuning of designs
Related links
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