Infineon BSZ Type N-Channel MOSFET, 104 A, 60 V N, 8-Pin TSDSON BSZ037N06LS5ATMA1
- RS Stock No.:
- 258-0712
- Mfr. Part No.:
- BSZ037N06LS5ATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
TWD159.00
(exc. GST)
TWD166.96
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 2,000 unit(s) shipping from July 20, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | TWD79.50 | TWD159.00 |
| 10 - 98 | TWD75.50 | TWD151.00 |
| 100 - 248 | TWD70.00 | TWD140.00 |
| 250 - 498 | TWD65.00 | TWD130.00 |
| 500 + | TWD60.50 | TWD121.00 |
*price indicative
- RS Stock No.:
- 258-0712
- Mfr. Part No.:
- BSZ037N06LS5ATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 104A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | BSZ | |
| Package Type | TSDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.3mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Forward Voltage Vf | 0.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 69W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC 61249-2-21, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 104A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series BSZ | ||
Package Type TSDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.3mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Forward Voltage Vf 0.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 69W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC 61249-2-21, RoHS | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 60V power MOSFET comprises a perfect fit for optimized efficiency and power density solutions such as synchronous rectification in switched mode power supplies, for telecom bricks and server applications, as well as portable chargers. The small footprint of only 3.3x3.3mm2 combined with outstanding electrical performance further contributes towards best-in-class power density and form factor improvement in the end application.
Monolithically integrated Schottky-like diode
Ultra low charges
Ideal for high performance applications
RoHS compliant - halogen free
Less paralleling required
Very low voltage overshoot
Reduced need for snubber circuit
Related links
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