Infineon BSZ N-Channel MOSFET, 104 A, 60 V N, 8-Pin TSDSON BSZ037N06LS5ATMA1

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Subtotal (1 pack of 2 units)*

TWD173.00

(exc. GST)

TWD181.64

(inc. GST)

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Units
Per unit
Per Pack*
2 - 8TWD86.50TWD173.00
10 - 98TWD82.00TWD164.00
100 - 248TWD76.00TWD152.00
250 - 498TWD70.50TWD141.00
500 +TWD66.00TWD132.00

*price indicative

Packaging Options:
RS Stock No.:
258-0712
Mfr. Part No.:
BSZ037N06LS5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

104A

Maximum Drain Source Voltage Vds

60V

Package Type

TSDSON

Series

BSZ

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5.3mΩ

Channel Mode

N

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

35nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

800mV

Maximum Power Dissipation Pd

69W

Maximum Operating Temperature

150°C

Standards/Approvals

IEC 61249-2-21, RoHS

Automotive Standard

No

The Infineon OptiMOS 5 60V power MOSFET comprises a perfect fit for optimized efficiency and power density solutions such as synchronous rectification in switched mode power supplies, for telecom bricks and server applications, as well as portable chargers. The small footprint of only 3.3x3.3mm2 combined with outstanding electrical performance further contributes towards best-in-class power density and form factor improvement in the end application.

Monolithically integrated Schottky-like diode

Ultra low charges

Ideal for high performance applications

RoHS compliant - halogen free

Less paralleling required

Very low voltage overshoot

Reduced need for snubber circuit

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