Infineon OptiMOS Type N-Channel MOSFET, 306 A, 60 V TSON

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Subtotal (1 reel of 5000 units)*

TWD339,000.00

(exc. GST)

TWD355,950.00

(inc. GST)

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Temporarily out of stock
  • Shipping from June 07, 2027
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Units
Per unit
Per Reel*
5000 - 5000TWD67.80TWD339,000.00
10000 +TWD65.80TWD329,000.00

*price indicative

RS Stock No.:
258-0678
Mfr. Part No.:
BSC012N06NSATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

306A

Maximum Drain Source Voltage Vds

60V

Series

OptiMOS

Package Type

TSON

Mount Type

Surface

Maximum Drain Source Resistance Rds

15mΩ

Forward Voltage Vf

1.2V

Standards/Approvals

No

Automotive Standard

No

The Infineon OptiMOS MOSFETs in SuperSO8 package extend OptiMOS 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance. Low reverse recovery charge improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort.

Lower full load temperature

Less paralleling

Reduced overshoot

Increased system power density

Smaller size

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