Infineon HEXFET N-Channel MOSFET, 43 A, 200 V TO-263 IRFS38N20DTRLP
- RS Stock No.:
- 257-9428
- Mfr. Part No.:
- IRFS38N20DTRLP
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Get a bulk buy discount
Add 10 more to save 21%
View bulk pricing optionsSubtotal (1 pack of 2 units)*
TWD310.00
(exc. GST)
TWD325.50
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 624 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 2 - 8 | TWD155.00 | TWD310.00 | - |
| 10 - 48 | TWD122.00 | TWD244.00 | 21% |
| 50 - 98 | TWD119.50 | TWD239.00 | 22% |
| 100 - 248 | TWD102.50 | TWD205.00 | 33% |
| 250 + | TWD96.00 | TWD192.00 | 38% |
*price indicative
- RS Stock No.:
- 257-9428
- Mfr. Part No.:
- IRFS38N20DTRLP
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 43A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 54mΩ | |
| Forward Voltage Vf | 1.5V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 60nC | |
| Maximum Power Dissipation Pd | 320W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 43A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 54mΩ | ||
Forward Voltage Vf 1.5V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 60nC | ||
Maximum Power Dissipation Pd 320W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRFS series is the 200V single n channel IR mosfet in a D2 Pak package.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below 100 kHz
Industry standard surface mount power package
High current carrying capability package (up to 195 A, die size dependent)
Capable of being wave soldered
Related links
- Infineon HEXFET N-Channel MOSFET 200 V TO-263 IRFS38N20DTRLP
- Infineon HEXFET N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220 IRFB38N20DPBF
- Infineon HEXFET N-Channel MOSFET 150 V, 3-Pin TO-263 IRF3415STRLPBF
- Infineon HEXFET N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263 IRFS3806TRLPBF
- Infineon HEXFET N-Channel MOSFET 200 V TO-263 IRFS4227TRLPBF
- Infineon HEXFET N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 60 V TO-252 IRFR3806TRPBF