Infineon HEXFET Type N-Channel MOSFET, 80 A, 75 V TO-263 IRFS3607TRLPBF
- RS Stock No.:
- 257-9426
- Distrelec Article No.:
- 304-40-543
- Mfr. Part No.:
- IRFS3607TRLPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
TWD172.00
(exc. GST)
TWD180.60
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 2,685 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | TWD34.40 | TWD172.00 |
| 50 - 95 | TWD32.60 | TWD163.00 |
| 100 - 245 | TWD30.80 | TWD154.00 |
| 250 - 995 | TWD28.60 | TWD143.00 |
| 1000 + | TWD26.40 | TWD132.00 |
*price indicative
- RS Stock No.:
- 257-9426
- Distrelec Article No.:
- 304-40-543
- Mfr. Part No.:
- IRFS3607TRLPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Maximum Drain Source Resistance Rds | 9mΩ | |
| Maximum Power Dissipation Pd | 140W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Maximum Drain Source Resistance Rds 9mΩ | ||
Maximum Power Dissipation Pd 140W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRFS series is the 75V single n channel HEXFET power mosfet in a D2 Pak package.
Improved gate, avalanche and dynamic dv/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and dI/dt capability
Related links
- Infineon HEXFET Type N-Channel MOSFET 75 V TO-263
- Infineon HEXFET Type N-Channel MOSFET 75 V TO-252
- Infineon HEXFET Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 75 V Enhancement, 3-Pin IPAK
- Infineon HEXFET Type N-Channel MOSFET 75 V TO-252 IRFR3607TRPBF
- Infineon HEXFET Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-220 IRFB3607PBF
- Infineon HEXFET Type N-Channel MOSFET 75 V Enhancement, 3-Pin IPAK IRFU3607PBF
- Infineon HEXFET Type N-Channel MOSFET 75 V TO-263