Infineon HEXFET Type N-Channel MOSFET, 100 A, 30 V, 8-Pin PQFN IRFH5302TRPBF
- RS Stock No.:
- 257-9373
- Mfr. Part No.:
- IRFH5302TRPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
TWD363.00
(exc. GST)
TWD381.15
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 3,985 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | TWD72.60 | TWD363.00 |
| 50 - 95 | TWD68.80 | TWD344.00 |
| 100 - 495 | TWD65.00 | TWD325.00 |
| 500 - 1995 | TWD61.00 | TWD305.00 |
| 2000 + | TWD52.20 | TWD261.00 |
*price indicative
- RS Stock No.:
- 257-9373
- Mfr. Part No.:
- IRFH5302TRPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PQFN | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.5mΩ | |
| Maximum Power Dissipation Pd | 100W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 5mm | |
| Width | 6mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PQFN | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.5mΩ | ||
Maximum Power Dissipation Pd 100W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 5mm | ||
Width 6mm | ||
Automotive Standard No | ||
The Infineon IRFH series is the 30V single n channel strong IRFET power mosfet in a PQFN 5x6 package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.
Industry standard surface mount power package
Product qualification according to JEDEC standard
Silicon optimized for applications switching below 100 kHz
Softer body diode compared to previous silicon generation
Wide portfolio available
Related links
- Infineon HEXFET Type N-Channel MOSFET 30 V, 8-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET 30 V, 8-Pin PQFN IRFH5301TRPBF
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 8-Pin PQFN IRFH5006TRPBF
- Infineon HEXFET Type N-Channel MOSFET & Diode 30 V Enhancement, 8-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET & Diode 30 V Enhancement, 8-Pin PQFN IRFH5300TRPBF
- Infineon HEXFET Type N-Channel MOSFET 100 V, 8-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET 150 V, 8-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET 30 V, 8-Pin PQFN