Infineon HEXFET N-Channel MOSFET, 46 A, 250 V Enhancement TO-220 IRFB4229PBF

RS Stock No.:: 257-9347
Mfr. Part No.:: IRFB4229PBF
Manufacturer:: Infineon

Infineon HEXFET N-Channel MOSFET, 46 A, 250 V Enhancement TO-220 IRFB4229PBF

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Subtotal (1 pack of 2 units)*

TWD291.00

(exc. GST)

TWD305.56

(inc. GST)

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Units	Per unit	Per Pack*
2 - 8	TWD145.50	TWD291.00
10 - 18	TWD131.00	TWD262.00
20 - 98	TWD128.50	TWD257.00
100 - 498	TWD107.00	TWD214.00
500 +	TWD92.50	TWD185.00

*price indicative

RS Stock No.:: 257-9347
Mfr. Part No.:: IRFB4229PBF
Manufacturer:: Infineon

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	46A
	Maximum Drain Source Voltage Vds	250V
	Package Type	TO-220
	Series	HEXFET
	Mount Type	Through Hole
	Maximum Drain Source Resistance Rds	46mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-40°C
	Typical Gate Charge Qg @ Vgs	72nC
	Maximum Gate Source Voltage Vgs	10V
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 46A
	Maximum Drain Source Voltage Vds 250V
	Package Type TO-220
	Series HEXFET
	Mount Type Through Hole
	Maximum Drain Source Resistance Rds 46mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -40°C
	Typical Gate Charge Qg @ Vgs 72nC
	Maximum Gate Source Voltage Vgs 10V
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IRFB4229PBF

Infineon HEXFET Series MOSFET, 250V Maximum Drain-Source Voltage, 46A Maximum Continuous Drain Current - IRFB4229PBF

This MOSFET is a through-hole N-channel power transistor designed for switching and amplification in high-voltage circuitry. It operates across a wide temperature span and is suitable for applications requiring robust gate-drive characteristics and moderate on-resistance in a TO-220 package.

Features and Benefits:

• 46A continuous current enables high-load switching capability
• 46mΩ Rds(on) reduces conduction losses in power paths
• 250V drain-source rating permits high-voltage operation
• 72nC typical gate charge supports predictable switching behaviour
• 10V maximum gate-source voltage allows standard gate-drive levels

Applications

• Used for high-voltage power conversion stages
• Suitable for discrete motor-drive switching elements
• Ideal for general-purpose through-hole power boards
• Can be used for industrial control switching modules
• Used with thermal management in elevated-temperature systems

What package type is supplied for mounting convenience?

It is offered in a TO-220 through-hole package for easy PCB fastening and heat-sinking.

What temperature range can it withstand during operation?

The device is rated to function from -40°C up to 175°C.

What gate-drive constraints should be observed?

The gate-source voltage must not exceed 10V to avoid damaging the gate oxide.

Is this device suitable for automotive-standard specification use?

It is not specified as meeting automotive standards and should not be assumed to be automotive-grade.