Infineon HEXFET N-Channel MOSFET, 67 A, 60 V Micro8 IRF6674TRPBF

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Subtotal (1 reel of 4800 units)*

TWD506,400.00

(exc. GST)

TWD531,744.00

(inc. GST)

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Units
Per unit
Per Reel*
4800 +TWD105.50TWD506,400.00

*price indicative

RS Stock No.:
257-9297
Mfr. Part No.:
IRF6674TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

67A

Maximum Drain Source Voltage Vds

60V

Series

HEXFET

Package Type

Micro8

Mount Type

Through Hole

Maximum Drain Source Resistance Rds

11mΩ

Maximum Power Dissipation Pd

89W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

24nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Infineon IRF series is the 60V single n channel strong IRFET power mosfet in a direct FET mx package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

High current rating

dual-side cooling capability

Low package height of 0.7mm

Low parasitic (1 to 2 nH) inductance package

100 percent lead free (No RoHS exemption)

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