Infineon HEXFET N-Channel MOSFET, 900 mA, 150 V, 6-Pin TSOP-6 IRF5802TRPBF

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Subtotal (1 reel of 3000 units)*

TWD18,300.00

(exc. GST)

TWD19,200.00

(inc. GST)

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Units
Per unit
Per Reel*
3000 - 3000TWD6.10TWD18,300.00
6000 +TWD5.90TWD17,700.00

*price indicative

RS Stock No.:
257-9289
Mfr. Part No.:
IRF5802TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

900mA

Maximum Drain Source Voltage Vds

150V

Package Type

TSOP-6

Series

HEXFET

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

150mΩ

Typical Gate Charge Qg @ Vgs

4.5nC

Maximum Power Dissipation Pd

2W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30V

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRF series is the IR mosfet family of power mosfets utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as dc motors, inverters, SMPS, lighting, load switches as well as battery powered applications.

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below 100 kHz

Industry standard surface mount power package

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