Infineon HEXFET N-Channel MOSFET, 162 A, 40 V TO-263 IRF1404STRLPBF

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Subtotal (1 pack of 2 units)*

TWD247.00

(exc. GST)

TWD259.36

(inc. GST)

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Units
Per unit
Per Pack*
2 - 8TWD123.50TWD247.00
10 - 48TWD105.50TWD211.00
50 - 98TWD103.50TWD207.00
100 - 248TWD88.50TWD177.00
250 +TWD85.50TWD171.00

*price indicative

Packaging Options:
RS Stock No.:
257-9274
Distrelec Article No.:
304-40-515
Mfr. Part No.:
IRF1404STRLPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

162A

Maximum Drain Source Voltage Vds

40V

Series

HEXFET

Package Type

TO-263

Mount Type

Through Hole

Maximum Drain Source Resistance Rds

4mΩ

Maximum Power Dissipation Pd

200W

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

160nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRF series is the 40V single n channel HEXFET power mosfet in a D2 Pak package.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Optimized for 10 V gate drive voltage (called normal level)

Industry standard surface mount power package

High current carrying capability package (up to 195 A, die size dependent)

Capable of being wave soldered

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