Infineon HEXFET N-Channel MOSFET & Diode, 162 A, 40 V Enhancement, 3-Pin TO-263 AUIRF1404STRL

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Subtotal (1 reel of 800 units)*

TWD93,280.00

(exc. GST)

TWD97,944.00

(inc. GST)

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Units
Per unit
Per Reel*
800 - 800TWD116.60TWD93,280.00
1600 +TWD114.30TWD91,440.00

*price indicative

RS Stock No.:
220-7340
Mfr. Part No.:
AUIRF1404STRL
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET & Diode

Channel Type

N

Maximum Continuous Drain Current Id

162A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

4mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

160nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

200W

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Width

9.65mm

Standards/Approvals

No

Height

4.83mm

Length

10.67mm

Automotive Standard

AEC-Q101

The Infineon AUIRF1404STRL specifically designed for Automotive applications, this Stripe. it has planar design of HEXFET power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

Advanced planar technology

Dynamic dV/dT rating

175°C operating temperature

Fast switching

Fully Avalanche Rated

Repetitive avalanche allowed up to Tjmax

Lead free, RoHS compliant

Automotive qualified

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