Infineon HEXFET N-Channel MOSFET, 42 A, 85 V TO-252 IRFR2407TRPBF

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Subtotal (1 pack of 5 units)*

TWD414.00

(exc. GST)

TWD434.70

(inc. GST)

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Units
Per unit
Per Pack*
5 - 45TWD82.80TWD414.00
50 - 95TWD78.20TWD391.00
100 - 245TWD74.60TWD373.00
250 - 995TWD68.80TWD344.00
1000 +TWD63.00TWD315.00

*price indicative

Packaging Options:
RS Stock No.:
257-5841
Distrelec Article No.:
304-40-537
Mfr. Part No.:
IRFR2407TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

42A

Maximum Drain Source Voltage Vds

85V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

26mΩ

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

74nC

Maximum Power Dissipation Pd

110W

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below <100kHz

Industry standard surface mount package

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