Infineon HEXFET N-Channel MOSFET, 180 A, 100 V TO-263 IRLS4030TRLPBF
- RS Stock No.:
- 257-5840
- Mfr. Part No.:
- IRLS4030TRLPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
TWD314.00
(exc. GST)
TWD329.70
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from March 16, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | TWD157.00 | TWD314.00 |
| 10 - 48 | TWD141.00 | TWD282.00 |
| 50 - 98 | TWD137.50 | TWD275.00 |
| 100 - 248 | TWD118.50 | TWD237.00 |
| 250 + | TWD115.50 | TWD231.00 |
*price indicative
- RS Stock No.:
- 257-5840
- Mfr. Part No.:
- IRLS4030TRLPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | PCB | |
| Maximum Drain Source Resistance Rds | 4.3mΩ | |
| Forward Voltage Vf | 1.3V | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type PCB | ||
Maximum Drain Source Resistance Rds 4.3mΩ | ||
Forward Voltage Vf 1.3V | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon HEXFET power MOSFET is optimized for logic level drive, very low RDS at 4.5V VGS, its used DC motor drive, high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
Superior R*Q at 45V VGS
Improved gate, avalanche and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and dI/dt capability
Lead-free
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