Infineon HEXFET Type N-Channel MOSFET, 3.4 A, 20 V PQFN IRLHS6276TRPBF
- RS Stock No.:
- 257-5826
- Mfr. Part No.:
- IRLHS6276TRPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
TWD213.00
(exc. GST)
TWD223.60
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 3,570 unit(s) shipping from September 07, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | TWD21.30 | TWD213.00 |
| 50 - 90 | TWD20.10 | TWD201.00 |
| 100 - 490 | TWD19.10 | TWD191.00 |
| 500 - 1990 | TWD17.80 | TWD178.00 |
| 2000 + | TWD16.40 | TWD164.00 |
*price indicative
- RS Stock No.:
- 257-5826
- Mfr. Part No.:
- IRLHS6276TRPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.4A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | PQFN | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Typical Gate Charge Qg @ Vgs | 3.1nC | |
| Maximum Power Dissipation Pd | 9.6W | |
| Maximum Operating Temperature | 150°C | |
| Width | 2mm | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.4A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type PQFN | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 12V | ||
Typical Gate Charge Qg @ Vgs 3.1nC | ||
Maximum Power Dissipation Pd 9.6W | ||
Maximum Operating Temperature 150°C | ||
Width 2mm | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Industry standard surface-mount power package
Low RDS(on) in a small package
Related links
- Infineon HEXFET Type N-Channel MOSFET 20 V PQFN
- Infineon HEXFET Type N-Channel MOSFET -40 V, 6-Pin TSOP-6
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET -40 V, 6-Pin TSOP-6 IRF5803TRPBF
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 IRLML6346TRPBF
- Infineon HEXFET Type N-Channel MOSFET 20 V PQFN
- Infineon HEXFET Type N-Channel MOSFET 20 V PQFN
- Infineon HEXFET Type N-Channel MOSFET 20 V PQFN