Infineon HEXFET Type N-Channel MOSFET, 85 A, 60 V PQFN IRFH7545TRPBF
- RS Stock No.:
- 257-5818
- Mfr. Part No.:
- IRFH7545TRPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
TWD371.00
(exc. GST)
TWD389.55
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 2,790 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | TWD74.20 | TWD371.00 |
| 50 - 95 | TWD70.00 | TWD350.00 |
| 100 - 495 | TWD66.80 | TWD334.00 |
| 500 - 1995 | TWD62.20 | TWD311.00 |
| 2000 + | TWD56.80 | TWD284.00 |
*price indicative
- RS Stock No.:
- 257-5818
- Mfr. Part No.:
- IRFH7545TRPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 85A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PQFN | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 5.2mΩ | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 83W | |
| Typical Gate Charge Qg @ Vgs | 73nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 6mm | |
| Standards/Approvals | RoHS | |
| Height | 1.17mm | |
| Length | 5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 85A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PQFN | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 5.2mΩ | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 83W | ||
Typical Gate Charge Qg @ Vgs 73nC | ||
Maximum Operating Temperature 150°C | ||
Width 6mm | ||
Standards/Approvals RoHS | ||
Height 1.17mm | ||
Length 5mm | ||
Automotive Standard No | ||
The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Industry standard surface-mount power package
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100 kHz
Softer body-diode compared to previous silicon generation
Wide portfolio available
Related links
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