Infineon HEXFET Type N-Channel MOSFET, 110 A, 60 V TO-252 IRFR7540TRPBF
- RS Stock No.:
- 257-5806
- Mfr. Part No.:
- IRFR7540TRPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
TWD91.00
(exc. GST)
TWD95.55
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 1,640 unit(s) shipping from January 26, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | TWD18.20 | TWD91.00 |
| 50 - 95 | TWD17.60 | TWD88.00 |
| 100 - 245 | TWD17.00 | TWD85.00 |
| 250 - 995 | TWD16.60 | TWD83.00 |
| 1000 + | TWD16.20 | TWD81.00 |
*price indicative
- RS Stock No.:
- 257-5806
- Mfr. Part No.:
- IRFR7540TRPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 110A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 4.8mΩ | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 86nC | |
| Maximum Power Dissipation Pd | 140W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 110A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 4.8mΩ | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 86nC | ||
Maximum Power Dissipation Pd 140W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon HEXFET power MOSFET is improved gate, avalanche and dynamic dV/dt ruggedness and fully characterized capacitance and avalanche SOA.
Enhanced body diode dV/dt and dI/dt capability
Lead-free, RoHS compliant
Related links
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