Infineon HEXFET Type N-Channel MOSFET, 265 A, 40 V PQFN IRFH7084TRPBF
- RS Stock No.:
- 257-5804
- Mfr. Part No.:
- IRFH7084TRPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
TWD414.00
(exc. GST)
TWD434.70
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 2,430 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | TWD82.80 | TWD414.00 |
| 50 - 95 | TWD81.40 | TWD407.00 |
| 100 - 495 | TWD79.40 | TWD397.00 |
| 500 - 1995 | TWD78.00 | TWD390.00 |
| 2000 + | TWD76.60 | TWD383.00 |
*price indicative
- RS Stock No.:
- 257-5804
- Mfr. Part No.:
- IRFH7084TRPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 265A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PQFN | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 1.25mΩ | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 156W | |
| Typical Gate Charge Qg @ Vgs | 127nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.05mm | |
| Length | 6mm | |
| Standards/Approvals | RoHS | |
| Width | 5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 265A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PQFN | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 1.25mΩ | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 156W | ||
Typical Gate Charge Qg @ Vgs 127nC | ||
Maximum Operating Temperature 150°C | ||
Height 1.05mm | ||
Length 6mm | ||
Standards/Approvals RoHS | ||
Width 5mm | ||
Automotive Standard No | ||
The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Industry standard surface-mount power package
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100 kHz
Softer body-diode compared to previous silicon generation
Wide portfolio available
Related links
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