Vishay Type N-Channel MOSFET, 25 A, 20 V, 8-Pin PowerPAK ChipFET
- RS Stock No.:
- 256-7364
- Mfr. Part No.:
- SI5442DU-T1-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Subtotal (1 reel of 3000 units)*
TWD28,500.00
(exc. GST)
TWD29,940.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from October 19, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | TWD9.50 | TWD28,500.00 |
*price indicative
- RS Stock No.:
- 256-7364
- Mfr. Part No.:
- SI5442DU-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | PowerPAK ChipFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 0.85mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type PowerPAK ChipFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 0.85mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Vishay SI5442DU Series MOSFET, 20V Maximum Drain Source Voltage, 25A Maximum Continuous Drain Current - SI5442DU-T1-GE3
This MOSFET is a Compact N‑channel switching device intended for surface‑mount power applications. It is designed to handle significant continuous current while operating across a wide temperature range, making it suitable for industrial control and power‑conversion contexts where low conduction losses and Rapid switching are required.
Features and Benefits:
• 25A continuous current capability enables high‑current switching
• 0.0135 Ω Rds(on) minimises conduction losses in power paths
• 20V drain‑source rating supports low‑voltage power rails
• 16.6 nC typical gate charge allows efficient switching control
• 31W power dissipation supports sustained thermal load handling
• Vgs maximum 8V protects the gate from overvoltage during drive
• 0.0135 Ω Rds(on) minimises conduction losses in power paths
• 20V drain‑source rating supports low‑voltage power rails
• 16.6 nC typical gate charge allows efficient switching control
• 31W power dissipation supports sustained thermal load handling
• Vgs maximum 8V protects the gate from overvoltage during drive
Applications
• Suitable for motor‑drive power stages in automation systems
• Ideal for synchronous buck converters in DC-DC supplies
• Used for high‑current load switching in industrial controls
• Can be used for power management in battery‑powered equipment
• Ideal for synchronous buck converters in DC-DC supplies
• Used for high‑current load switching in industrial controls
• Can be used for power management in battery‑powered equipment
What thermal operating limits should be considered during design?
The device is rated for operation from -55 °C up to +150 °C, so thermal management must ensure junction temperatures remain within this range under Peak power conditions.
How many pins and what mounting style does it require on a board?
It is supplied in an 8‑pin surface‑mount PowerPAK ChipFET package, so pad layout and soldering profiles should match an 8‑pin SMD footprint.
What gate‑drive constraints affect drive circuitry selection?
The gate must not be driven beyond a maximum of 8 V, so gate drivers and level shifting must limit Vgs within that threshold to avoid damage.
How should designers evaluate switching performance for high‑frequency use?
Use the typical gate‑charge Value of 16.6 nC at the specified gate voltage to calculate driver energy and switching losses when determining efficiency at the target switching frequencies.
Related links
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