Vishay SI1427EDH Type P-Channel MOSFET, -2 A, -20 V, 6-Pin SC-70 SI1427EDH-T1-GE3

RS Stock No.:: 256-7340
Mfr. Part No.:: SI1427EDH-T1-GE3
Manufacturer:: Vishay

Vishay SI1427EDH Type P-Channel MOSFET, -2 A, -20 V, 6-Pin SC-70 SI1427EDH-T1-GE3

The image is for reference only, please refer to product details and specifications

Subtotal (1 reel of 3000 units)*

TWD21,000.00

(exc. GST)

TWD22,050.00

(inc. GST)

FREE delivery for orders over NT$1,300.00

Temporarily out of stock

Shipping from May 13, 2027

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
3000 +	TWD7.00	TWD21,000.00

*price indicative

RS Stock No.:: 256-7340
Mfr. Part No.:: SI1427EDH-T1-GE3
Manufacturer:: Vishay

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	-2A
	Maximum Drain Source Voltage Vds	-20V
	Package Type	SC-70
	Series	SI1427EDH
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	0.165Ω
	Forward Voltage Vf	-1.2V
	Maximum Gate Source Voltage Vgs	8V
	Typical Gate Charge Qg @ Vgs	7.6nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	2.8W
	Maximum Operating Temperature	150°C
	Height	1.1mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id -2A
	Maximum Drain Source Voltage Vds -20V
	Package Type SC-70
	Series SI1427EDH
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 0.165Ω
	Forward Voltage Vf -1.2V
	Maximum Gate Source Voltage Vgs 8V
	Typical Gate Charge Qg @ Vgs 7.6nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 2.8W
	Maximum Operating Temperature 150°C
	Height 1.1mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SI1427EDH-T1-GE3

Vishay SI1427EDH Series MOSFET, 20V Maximum Drain Source Voltage, 2A Maximum Continuous Drain Current - SI1427EDH-T1-GE3

This p-channel MOSFET is a surface-mount semiconductor intended for switching and power-management roles in compact electronic assemblies. It operates across a wide temperature span suitable for demanding conditions and is provided in a low-profile package for space-constrained board designs.

Features and Benefits:

• Low Rds(on) 0.165Ω for reduced conduction losses
• Continuous drain current rating of 2A for medium-power switching
• Drain-source voltage rating of 20V enables low-voltage systems
• Typical gate charge 7.6 nC for predictable switching performance
• Forward voltage of -1.2V minimises voltage drop during conduction
• RoHS compliant for use in regulated manufacturing environments

Applications

• Suitable for battery-protection and load-switch circuits
• Ideal for handheld and portable device power paths
• Used with DC-DC converters in compact assemblies
• Can be used for reverse-current blocking in power rails
• Suitable for low-voltage motor-control gate arrangements

What package considerations affect board layout?

It is supplied in an SC-70 package with six pins, permitting tight pad arrangements and straightforward reflow soldering for dense surface-mount designs.

How does thermal performance influence cooling requirements?

Maximum power dissipation is 2.8 W, so PCB copper area and thermal vias should be sized to remove heat when operating near that dissipation level.

What gate limitations must designers observe?

The gate must not exceed 8V relative to the source to avoid damaging the device, and the typical gate charge of 7.6 nC guides driver selection.

How does the device cope with extreme ambient conditions?

It is rated to function from -55 °C up to +150 °C, permitting use where wide thermal endurance is required.