Vishay IRFR9014 Type P-Channel MOSFET, 5.1 A, 60 V, 3-Pin TO-252 IRFR9014PBF

This power MOSFET is a P-channel device designed for switching and amplification tasks within industrial electronic systems. It operates at negative drain-source voltages up to -60V and supports moderate continuous currents, making it suitable for controlled power transfer in surface-mounted assemblies. The component is supplied in a TO-252 package and is intended for applications where compact, board-mounted power transistors are required.

• Low Rds(on) 0.5 Ω providing reduced conduction losses
• Maximum continuous drain current -5.1 A enabling sustained load handling
• Rated Vgs up to 20V allowing robust gate-drive margins
• Typical gate charge 12 nC facilitating Faster switching dynamics
• Maximum power dissipation 25W supporting thermal headroom
• Operating range -55 °C to +150 °C tolerating harsh temperatures

• Suitable for high-side switching in control modules
• Ideal for power management in automation equipment
• Used with motor drivers requiring P-channel switching
• Can be used for load protection in electrical assemblies
• Suitable for Compact surface-mount power boards

The device is supplied in a TO-252 surface-mount package with three pins for direct PCB mounting.

A 12 nC gate charge determines the required drive energy and influences switching losses and driver selection for efficient timing.

The component accepts up to 25W dissipation and a maximum junction temperature of +150 °C, so heat-sinking and PCB copper should be sized accordingly.

Design protective measures for a maximum drain-source voltage of -60V and continuous drain current of -5.1 A to prevent overstress.

Observe the maximum gate-source rating of 20V to avoid gate oxide damage and ensure ESD precautions during assembly.