Vishay IRFR9010 Type P-Channel Power MOSFET, -5.3 A, -50 V, 3-Pin TO-252 IRFR9010TRPBF

RS Stock No.:: 256-7310
Mfr. Part No.:: IRFR9010TRPBF
Manufacturer:: Vishay

Vishay IRFR9010 Type P-Channel Power MOSFET, -5.3 A, -50 V, 3-Pin TO-252 IRFR9010TRPBF

The image is for reference only, please refer to product details and specifications

Subtotal (1 reel of 2000 units)*

TWD34,400.00

(exc. GST)

TWD36,120.00

(inc. GST)

FREE delivery for orders over NT$1,300.00

Temporarily out of stock

Shipping from January 18, 2027

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
2000 +	TWD17.20	TWD34,400.00

*price indicative

RS Stock No.:: 256-7310
Mfr. Part No.:: IRFR9010TRPBF
Manufacturer:: Vishay

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	Power MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	-5.3A
	Maximum Drain Source Voltage Vds	-50V
	Package Type	TO-252
	Series	IRFR9010
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.5Ω
	Maximum Power Dissipation Pd	25W
	Forward Voltage Vf	-5.5V
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	9.1nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	+150°C
	Standards/Approvals	RoHS
	Height	2.39mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type Power MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id -5.3A
	Maximum Drain Source Voltage Vds -50V
	Package Type TO-252
	Series IRFR9010
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.5Ω
	Maximum Power Dissipation Pd 25W
	Forward Voltage Vf -5.5V
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 9.1nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature +150°C
	Standards/Approvals RoHS
	Height 2.39mm
	Automotive Standard No

Vishay IRFR9010 Series Power MOSFET, -50V Maximum Drain Source Voltage, 25W Maximum Power Dissipation - IRFR9010TRPBF

This power MOSFET is a P-channel surface-mount device designed for power switching in electronic and industrial systems. It delivers controlled conduction for negative-voltage switching and is intended for applications requiring moderate current handling and thermal endurance in Compact TO-252 packaging.

Features and Benefits:

• -50V drain-source rating enables negative-voltage switching capability • -5.3A continuous drain current supports medium-power loads • 0.5Ω Rds(on) reduces conduction losses under load • 25W power dissipation allows sustained power handling • 9.1nC typical gate charge supports moderate switching speeds • Rated to +150°C maximum operating temperature for high-temperature use

Applications

• Suitable for battery-protection and polarity-switch circuits • Ideal for power management in automation controllers • Used for reversed-polarity load switching in electrical systems • Can be used for medium-current MOSFET stages in power supplies • Suitable for Compact surface-mount assemblies requiring P-channel switching

What mounting format does it use and how does that affect thermal paths?

The device is supplied in a TO-252 (DPAK) surface-mount package, providing a metal tab and PCB land for heat transfer to enhance thermal dissipation into the board.

What are the gate voltage limits to avoid device damage?

The gate-source voltage must be kept within ±20V to prevent overstress of the gate oxide.

How does ambient temperature influence allowable operation?

The maximum junction rating of +150°C defines the upper thermal limit

designers should derate current and ensure adequate PCB cooling as ambient temperature rises.

What pin count and configuration should be expected when designing PCB footprints?

The package uses three pins consistent with standard TO-252 pinouts, enabling straightforward footprint design for drain, gate and source connections.