Vishay Type N-Channel MOSFET, 4.8 A, 200 V, 3-Pin TO-252
- RS Stock No.:
- 256-7308
- Mfr. Part No.:
- IRFR220PBF
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tube of 75 units)*
TWD892.50
(exc. GST)
TWD937.50
(inc. GST)
Add 150 units to get free delivery
In Stock
- 1,575 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 75 - 75 | TWD11.90 | TWD892.50 |
| 150 - 450 | TWD11.30 | TWD847.50 |
| 525 - 975 | TWD11.00 | TWD825.00 |
| 1050 - 2925 | TWD10.80 | TWD810.00 |
| 3000 + | TWD10.60 | TWD795.00 |
*price indicative
- RS Stock No.:
- 256-7308
- Mfr. Part No.:
- IRFR220PBF
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4.8A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.1Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 42W | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.39mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4.8A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.1Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 42W | ||
Maximum Operating Temperature 175°C | ||
Height 2.39mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay Semiconductor third generation power mosfet provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface-mount applications.
Dynamic dV/dt rating
Repetitive avalanche rated
Available in tape and reel
Fast switching
Ease of paralleling
Related links
- Vishay Type N-Channel MOSFET 200 V, 3-Pin TO-252 IRFR220PBF
- Vishay IRFR Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-252
- Vishay IRFR Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-252 IRFR220TRPBF
- Vishay Type N-Channel MOSFET 150 V, 8-Pin PowerPAK SO-8
- Vishay Type N-Channel MOSFET 150 V, 8-Pin PowerPAK SO-8 SI7898DP-T1-E3
- Infineon 500V CoolMOS CE Type N-Channel MOSFET 500 V N, 3-Pin TO-252
- Infineon 500V CoolMOS CE Type N-Channel MOSFET 500 V N, 3-Pin TO-252 IPD50R1K4CEAUMA1
- Vishay Type N-Channel MOSFET 150 V, 3-Pin TO-252