Vishay IRFPG30 Type N-Channel Power MOSFET, 3.1 A, 1000 V, 3-Pin TO-247AC IRFPG30PBF
- RS Stock No.:
- 256-7300
- Mfr. Part No.:
- IRFPG30PBF
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Subtotal (1 tube of 25 units)*
TWD2,290.00
(exc. GST)
TWD2,404.50
(inc. GST)
FREE delivery for orders over NT$1,300.00
- 400 unit(s) shipping from August 17, 2026
Units | Per unit | Per Tube* |
|---|---|---|
| 25 - 75 | TWD91.60 | TWD2,290.00 |
| 100 - 475 | TWD79.40 | TWD1,985.00 |
| 500 - 975 | TWD64.50 | TWD1,612.50 |
| 1000 + | TWD60.00 | TWD1,500.00 |
*price indicative
- RS Stock No.:
- 256-7300
- Mfr. Part No.:
- IRFPG30PBF
- Manufacturer:
- Vishay
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 3.1A | |
| Maximum Drain Source Voltage Vds | 1000V | |
| Series | IRFPG30 | |
| Package Type | TO-247AC | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5Ω | |
| Forward Voltage Vf | 1.8V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 125W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Height | 5.21mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 3.1A | ||
Maximum Drain Source Voltage Vds 1000V | ||
Series IRFPG30 | ||
Package Type TO-247AC | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5Ω | ||
Forward Voltage Vf 1.8V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 125W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Height 5.21mm | ||
Automotive Standard No | ||
Vishay IRFPG30 Series Power MOSFET, 1000V Maximum Drain Source Voltage, 125W Maximum Power Dissipation - IRFPG30PBF
Features and Benefits:
• 3.1A continuous current supports moderate load conduction
• 125W dissipation allows sustained power handling under load
• 5Ω maximum RDS(on) limits conduction losses at rated conditions
• 80nC typical gate charge offers predictable switching energy
• 20V gate tolerance protects against excessive gate drive
Applications
• Used in industrial motor drive control stages
• Ideal for switching in induction heating systems
• Can be used for line-side surge or clamp circuits
• Used for educational and prototype through-hole power designs
What mounting method does it require for installation?
How does it behave across temperature extremes?
What gate drive constraints should designers observe?
Are there any materials or environmental restrictions noted?
Related links
- Vishay IRFPG30 Type N-Channel Power MOSFET 1000 V, 3-Pin TO-247AC IRFPG30PBF
- Vishay EF Type N-Channel Power MOSFET 800 V, 3-Pin TO-247AC SIHG15N80AEF-GE3
- Infineon HEXFET Type N-Channel Power MOSFET 150 V Enhancement, 3-Pin TO-247AC
- Vishay EF Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-247AC
- Vishay EF Type N-Channel Power MOSFET 650 V Enhancement, 3-Pin TO-247AC SIHG085N60EF-GE3
- Vishay SiHG20N50C Type N-Channel Power MOSFET 500 V Enhancement, 3-Pin TO-247AC SIHG20N50C-E3
- Vishay EF Type N-Channel Power MOSFET 650 V Depletion, 3-Pin TO-247AC SIHG026N60EF-GE3
- Vishay E Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-247AC SIHG21N80AE-GE3
