DiodesZetex Type P-Channel MOSFET, 30 V X2-DFN0806-6
- RS Stock No.:
- 254-8637
- Mfr. Part No.:
- DMP32D9UDAQ-7B
- Manufacturer:
- DiodesZetex
The image is for reference only, please refer to product details and specifications
Subtotal (1 reel of 10000 units)*
TWD14,000.00
(exc. GST)
TWD14,700.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 10,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 10000 + | TWD1.40 | TWD14,000.00 |
*price indicative
- RS Stock No.:
- 254-8637
- Mfr. Part No.:
- DMP32D9UDAQ-7B
- Manufacturer:
- DiodesZetex
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | X2-DFN0806-6 | |
| Mount Type | Surface | |
| Forward Voltage Vf | -0.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.36W | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Typical Gate Charge Qg @ Vgs | 0.35nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type X2-DFN0806-6 | ||
Mount Type Surface | ||
Forward Voltage Vf -0.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.36W | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Typical Gate Charge Qg @ Vgs 0.35nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The DiodeZetex P channel enhancement mode MOSFET has been designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is applicable in general purpose inte
Low on resistance
Low input capacitance
Halogen and antimony Free
ESD protected gate
Related links
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