DiodesZetex Type P-Channel MOSFET, 20 V X2-DFN0806-6 DMP22D5UDA-7B
- RS Stock No.:
- 254-8620
- Mfr. Part No.:
- DMP22D5UDA-7B
- Manufacturer:
- DiodesZetex
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 25 units)*
TWD162.50
(exc. GST)
TWD170.50
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- 20,000 unit(s) shipping from February 04, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 475 | TWD6.50 | TWD162.50 |
| 500 - 975 | TWD6.10 | TWD152.50 |
| 1000 - 2475 | TWD5.70 | TWD142.50 |
| 2500 - 4975 | TWD5.40 | TWD135.00 |
| 5000 + | TWD5.00 | TWD125.00 |
*price indicative
- RS Stock No.:
- 254-8620
- Mfr. Part No.:
- DMP22D5UDA-7B
- Manufacturer:
- DiodesZetex
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | X2-DFN0806-6 | |
| Mount Type | Surface | |
| Typical Gate Charge Qg @ Vgs | 0.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.36W | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type X2-DFN0806-6 | ||
Mount Type Surface | ||
Typical Gate Charge Qg @ Vgs 0.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.36W | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The DiodeZetex P channel enhancement mode MOSFET has been designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is applicable in general purpose inte
Low on resistance
Very low gate threshold voltage
ESD protected gate
Halogen and antimony Free
Related links
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