DiodesZetex DMN2040U Type N-Channel MOSFET, 6 A, 20 V Enhancement, 3-Pin SOT-23 DMN2055UQ-7
- RS Stock No.:
- 254-8602
- Mfr. Part No.:
- DMN2055UQ-7
- Manufacturer:
- DiodesZetex
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
TWD275.00
(exc. GST)
TWD288.75
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 2,675 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | TWD11.00 | TWD275.00 |
| 50 - 75 | TWD10.40 | TWD260.00 |
| 100 - 225 | TWD9.80 | TWD245.00 |
| 250 - 975 | TWD9.10 | TWD227.50 |
| 1000 + | TWD8.40 | TWD210.00 |
*price indicative
- RS Stock No.:
- 254-8602
- Mfr. Part No.:
- DMN2055UQ-7
- Manufacturer:
- DiodesZetex
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | DMN2040U | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 33mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.36W | |
| Typical Gate Charge Qg @ Vgs | 7.5nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3mm | |
| Height | 1mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series DMN2040U | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 33mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.36W | ||
Typical Gate Charge Qg @ Vgs 7.5nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3mm | ||
Height 1mm | ||
Automotive Standard AEC-Q101 | ||
The DiodeZetex enhancement mode MOSFET has been designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is applicable in general purpose interfacing sw
Low on resistance
Low input capacitance
ESD protected gate
Halogen and antimony Free
Related links
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