onsemi NTB N-Channel MOSFET, 58 A, 1.2 kV Enhancement, 7-Pin TO-263 NTBG060N065SC1
- RS Stock No.:
- 254-7665
- Mfr. Part No.:
- NTBG060N065SC1
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
TWD416.00
(exc. GST)
TWD436.80
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 657 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 1 - 9 | TWD416.00 |
| 10 - 99 | TWD382.00 |
| 100 - 249 | TWD366.00 |
| 250 - 499 | TWD322.00 |
| 500 + | TWD289.00 |
*price indicative
- RS Stock No.:
- 254-7665
- Mfr. Part No.:
- NTBG060N065SC1
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Series | NTB | |
| Package Type | TO-263 | |
| Mount Type | Through Hole | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 4.5V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 74nC | |
| Maximum Power Dissipation Pd | 117W | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Series NTB | ||
Package Type TO-263 | ||
Mount Type Through Hole | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 4.5V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 74nC | ||
Maximum Power Dissipation Pd 117W | ||
Maximum Gate Source Voltage Vgs 22V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, D2PAK-7L
The ON Semiconductor NTB series of a silicon carbide mosfet uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition with the low on resistance and compact chip size. It ensures a low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Higher system reliability
Ultra low gate charge
High speed switching and low capacitance
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