Infineon IAUA Type N-Channel MOSFET, 250 A, 40 V Enhancement, 8-Pin PG-HSOF-5 IAUA250N04S6N008AUMA1
- RS Stock No.:
- 254-7204
- Mfr. Part No.:
- IAUA250N04S6N008AUMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 2 units)*
TWD112.00
(exc. GST)
TWD117.60
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 1,872 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | TWD56.00 | TWD112.00 |
| 10 - 98 | TWD54.50 | TWD109.00 |
| 100 - 248 | TWD54.00 | TWD108.00 |
| 250 - 498 | TWD52.50 | TWD105.00 |
| 500 + | TWD49.00 | TWD98.00 |
*price indicative
- RS Stock No.:
- 254-7204
- Mfr. Part No.:
- IAUA250N04S6N008AUMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 250A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IAUA | |
| Package Type | PG-HSOF-5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 250A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IAUA | ||
Package Type PG-HSOF-5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineons IAUA series of automotive MOSFET consist of n-channel with enhancement mode at normal level with an operating temperature of 175°C. It is a green product with enhanced electrical testing.
Robust design
Voltage rating from drain to source is 40 V
Power dissipation is 172 W
Related links
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