Vishay N-Channel MOSFET, 118 A, 30 V Enhancement, 4-Pin PowerPAK (8x8L) SQJ184EP-T1_GE3
- RS Stock No.:
- 252-0307
- Mfr. Part No.:
- SQJ184EP-T1_GE3
- Manufacturer:
- Vishay
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
TWD318.00
(exc. GST)
TWD333.90
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- 3,000 unit(s) shipping from October 19, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | TWD63.60 | TWD318.00 |
| 50 - 95 | TWD60.40 | TWD302.00 |
| 100 - 245 | TWD56.80 | TWD284.00 |
| 250 - 995 | TWD53.00 | TWD265.00 |
| 1000 + | TWD48.80 | TWD244.00 |
*price indicative
- RS Stock No.:
- 252-0307
- Mfr. Part No.:
- SQJ184EP-T1_GE3
- Manufacturer:
- Vishay
Specifications
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 118A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK (8x8L) | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.04mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 43nC | |
| Maximum Power Dissipation Pd | 214W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 4.9mm | |
| Length | 6.15mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 118A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK (8x8L) | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.04mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 43nC | ||
Maximum Power Dissipation Pd 214W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 4.9mm | ||
Length 6.15mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay automotive MOSFETs are manufactured on a dedicated process flow to in still ruggedness. Rated for a maximum junction temperature of 175 °C, the vishay siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-channel trench FET technologies in lead (Pb)- and halogen-free SO packages.
TrenchFET power MOSFET
AEC-Q101 qualified
100 % Rg and UIS tested
Thin 1.9 mm height
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