Nexperia N-Channel MOSFET, 410 mA, 50 V Enhancement, 4-Pin LFPAK88 PSMNR90-50SLHAX
- RS Stock No.:
- 251-7923
- Mfr. Part No.:
- PSMNR90-50SLHAX
- Manufacturer:
- Nexperia
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TWD407.00
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TWD427.36
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- RS Stock No.:
- 251-7923
- Mfr. Part No.:
- PSMNR90-50SLHAX
- Manufacturer:
- Nexperia
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 410mA | |
| Maximum Drain Source Voltage Vds | 50V | |
| Package Type | LFPAK88 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.9mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 375W | |
| Typical Gate Charge Qg @ Vgs | 112nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Width | 1.7mm | |
| Standards/Approvals | No | |
| Height | 8.1mm | |
| Length | 8.1mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 410mA | ||
Maximum Drain Source Voltage Vds 50V | ||
Package Type LFPAK88 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.9mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 375W | ||
Typical Gate Charge Qg @ Vgs 112nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Width 1.7mm | ||
Standards/Approvals No | ||
Height 8.1mm | ||
Length 8.1mm | ||
Automotive Standard AEC-Q101 | ||
The Nexperia 410 Amp continuous current, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK88 package. Part of the ASFETs for Battery Isolation and DC Motor control family and using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current.
Copper-clip and solder die attach for low package inductance and resistance, and high ID(max) rating
Qualified to 175 °C
Avalanche rated, 100 % tested
Low QG, QGD and QOSS for high efficiency, especially at higher switching frequencies
Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for low EMI designs
Narrow VGS(th) rating for easy paralleling and improved current sharing
Very strong linear-mode / safe operating area characteristics for safe and reliable switching at high-current conditions
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