Infineon BSS N-Channel MOSFET, 280 mA, 60 V Enhancement, 3-Pin SOT-323 BSS138WH6327XTSA1
- RS Stock No.:
- 250-0541
- Mfr. Part No.:
- BSS138WH6327XTSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 3000 units)*
TWD6,900.00
(exc. GST)
TWD7,260.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- 6,000 unit(s) shipping from December 10, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | TWD2.30 | TWD6,900.00 |
| 6000 - 6000 | TWD2.10 | TWD6,300.00 |
| 9000 + | TWD2.00 | TWD6,000.00 |
*price indicative
- RS Stock No.:
- 250-0541
- Mfr. Part No.:
- BSS138WH6327XTSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 280mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-323 | |
| Series | BSS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6000mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 280mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-323 | ||
Series BSS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6000mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon BSS Series MOSFET, 60V Maximum Drain-Source Voltage, 81W Maximum Power Dissipation - BSS138WH6327XTSA1
This n-channel enhancement device is a Compact surface-mount transistor designed for switching and amplification in constrained assemblies. It operates over a wide thermal range and is suited to environments requiring elevated temperature tolerance and standardised automotive qualification. The package facilitates automated soldering onto board assemblies where small-signal handling and thermal performance are required.
Features and Benefits:
• 60V maximum drain-source voltage enables higher-voltage switching capability
• 6000mΩ drain-source resistance reduces conduction losses for small currents
• 0.28A continuous drain current supports low-current signal paths
• 81W power-dissipation rating allows short-duration power handling
• +150°C maximum operating temperature sustains high-temperature operation
• 6000mΩ drain-source resistance reduces conduction losses for small currents
• 0.28A continuous drain current supports low-current signal paths
• 81W power-dissipation rating allows short-duration power handling
• +150°C maximum operating temperature sustains high-temperature operation
Applications
• Suitable for signal switching in Compact control modules
• Ideal for surface-mount power-management circuits on boards
• Used with automotive electronics requiring AEC‑Q101 qualification
• Can be used for low-current load drivers in portable devices
• Ideal for surface-mount power-management circuits on boards
• Used with automotive electronics requiring AEC‑Q101 qualification
• Can be used for low-current load drivers in portable devices
What are the permissible gate-voltage limits?
The gate may be driven up to 20V relative to the source before gate constraints are exceeded.
How does gate charge affect drive requirements?
An 80 nC typical gate charge at rated drive implies moderate transient energy is required from the gate driver.
What thermal extremes can the device withstand?
It operates down to -55°C and up to +150°C for broad environmental capability.
Related links
- RS PRO Black 3 mm² Hook Up Wire 30m
- RS PRO RS-172 Temperature & Humidity Data Logger
- 2961105 | Phoenix Contact PCB Mount Power Relay 6A Switching Current, SPDT
- Tedea Huntleigh Low Profile Load Cell Compression Measure
- ABB D45 Pluto Series Safety Controller 6 Safety Outputs, 24 V dc
- TE Connectivity Coaxial Cable RG400 Coaxial, Unterminated
- RS PRO I/O Extension Module for Use with RS PRO Logic Modules Digital
- Fluke 289 Handheld Digital Multimeter 10A ac Max 1000V ac Max