Infineon BSS Type N-Channel MOSFET, 170 mA, 100 V Depletion, 3-Pin SOT-23 BSS169H6327XTSA1
- RS Stock No.:
- 250-0551
- Distrelec Article No.:
- 304-40-500
- Mfr. Part No.:
- BSS169H6327XTSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
TWD142.00
(exc. GST)
TWD149.10
(inc. GST)
FREE delivery for orders over NT$1,300.00
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- 7,010 left, ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | TWD14.20 | TWD142.00 |
| 20 - 90 | TWD12.70 | TWD127.00 |
| 100 - 240 | TWD11.50 | TWD115.00 |
| 250 - 490 | TWD10.50 | TWD105.00 |
| 500 + | TWD9.30 | TWD93.00 |
*price indicative
- RS Stock No.:
- 250-0551
- Distrelec Article No.:
- 304-40-500
- Mfr. Part No.:
- BSS169H6327XTSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 170mA | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-23 | |
| Series | BSS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 12000mΩ | |
| Channel Mode | Depletion | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 170mA | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-23 | ||
Series BSS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 12000mΩ | ||
Channel Mode Depletion | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon BSS Series MOSFET, 100V Drain-Source Voltage, 0.17A Continuous Drain Current - BSS169H6327XTSA1
This MOSFET is a depletion‑mode N‑channel transistor in a Compact surface‑mount package designed for control and switching in constrained assemblies. It operates across a wide ambient range and is suitable for electrically demanding environments where thermal endurance and low‑voltage gate control are required. The device is RoHS‑compliant and meets an automotive qualification for use in vehicle electronics.
Features and Benefits:
• Depletion channel allows normally‑on operation for fail‑safe circuits
• Wide temperature tolerance enables operation from -55°C to +150°C
• Low continuous current supports precision low‑current control
• High voltage rating protects against transients up to 100V
• SOT‑23 package provides Compact surface‑mount assembly
• Wide temperature tolerance enables operation from -55°C to +150°C
• Low continuous current supports precision low‑current control
• High voltage rating protects against transients up to 100V
• SOT‑23 package provides Compact surface‑mount assembly
Applications
• Ideal for analogue biasing and level‑shift networks
• Suitable for small‑signal load switching in control modules
• Used with sensor interfaces requiring normally‑on behaviour
• Can be used for automotive ancillary circuitry conforming to AEC‑Q101
• Suitable for Compact power‑management subcircuits
• Suitable for small‑signal load switching in control modules
• Used with sensor interfaces requiring normally‑on behaviour
• Can be used for automotive ancillary circuitry conforming to AEC‑Q101
• Suitable for Compact power‑management subcircuits
What is the maximum gate‑to‑source voltage the device can accept?
It tolerates up to 20V between gate and source.
How much power can it dissipate during operation?
The device has a maximum power dissipation of 81W.
What gate charge should designers budget for at Vgs?
Typical total gate charge is 80 nC measured at the specified gate drive.
What is the on‑resistance characteristic relevant for thermal planning?
The maximum drain-source resistance is 12 000mΩ under specified conditions.
Is this device packaged for automated PCB assembly?
Yes, it is supplied in a SOT‑23 surface‑mount package.
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