Infineon Dual N BSD840N 2 Type P-Channel OptiMOSTM2 Small-Signal-Transistors, 0.88 A, 20 V Dual N, 6-Pin SOT-363
- RS Stock No.:
- 250-0526
- Mfr. Part No.:
- BSD840NH6327XTSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 10 units)*
TWD66.00
(exc. GST)
TWD69.30
(inc. GST)
FREE delivery for orders over NT$1,300.00
Stock information currently inaccessible
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | TWD6.60 | TWD66.00 |
| 20 - 90 | TWD5.90 | TWD59.00 |
| 100 - 240 | TWD5.30 | TWD53.00 |
| 250 - 490 | TWD4.80 | TWD48.00 |
| 500 + | TWD4.30 | TWD43.00 |
*price indicative
- RS Stock No.:
- 250-0526
- Mfr. Part No.:
- BSD840NH6327XTSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | OptiMOSTM2 Small-Signal-Transistors | |
| Maximum Continuous Drain Current Id | 0.88A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | BSD840N | |
| Package Type | SOT-363 | |
| Pin Count | 6 | |
| Channel Mode | Dual N | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 400mW | |
| Typical Gate Charge Qg @ Vgs | 0.26nC | |
| Transistor Configuration | Dual N | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC61249-2-21, RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type OptiMOSTM2 Small-Signal-Transistors | ||
Maximum Continuous Drain Current Id 0.88A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series BSD840N | ||
Package Type SOT-363 | ||
Pin Count 6 | ||
Channel Mode Dual N | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 400mW | ||
Typical Gate Charge Qg @ Vgs 0.26nC | ||
Transistor Configuration Dual N | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC61249-2-21, RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon Small Signal n-channel products are suitable for automotive applications. This device is OptiMOS 2 Small-Signal-Transistor. The Dual N-channel, Enhancement mode. The device offers Ultra Logic level (1.8V rated) and it is Avalanche rated.
Enhancement mode and Pb-free lead plating
Vds is 20 V and Id is 0.88 A
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