Infineon IAUC Type N-Channel MOSFET, 120 A, 40 V Enhancement, 8-Pin TDSON IAUC41N06S5N102ATMA1
- RS Stock No.:
- 249-8629
- Mfr. Part No.:
- IAUC41N06S5N102ATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
TWD134.00
(exc. GST)
TWD140.70
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 5,000 unit(s) shipping from January 28, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | TWD26.80 | TWD134.00 |
| 10 - 95 | TWD24.20 | TWD121.00 |
| 100 - 245 | TWD21.80 | TWD109.00 |
| 250 - 495 | TWD19.60 | TWD98.00 |
| 500 + | TWD17.60 | TWD88.00 |
*price indicative
- RS Stock No.:
- 249-8629
- Mfr. Part No.:
- IAUC41N06S5N102ATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IAUC | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IAUC | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon 60V, N-Ch, 10.2 mohm, Automotive MOSFET with OptiMOS 5 technology for 60V MOSFETs in the industry standard S3O8 5 mm x 6 mm small footprint package with leading performance providing low RDSon, QG and Gate capacitance and minimizing conduction and switching losses.
OptiMOS power MOSFET for automotive applications
N-channel, Enhancement mode, Normal Level
Extended qualification beyond AEC-Q101
Enhanced electrical testing
Robust design
MSL1 up to 260°C peak reflow
175°C operating temperature
Green product (RoHS compliant)
100 percent Avalanche tested
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