Infineon IAUC N-Channel MOSFET, 80 A, 40 V Enhancement, 8-Pin SuperSO8 5 x 6 IAUC80N04S6L032ATMA1
- RS Stock No.:
- 249-6895
- Mfr. Part No.:
- IAUC80N04S6L032ATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Subtotal (1 reel of 5000 units)*
TWD71,000.00
(exc. GST)
TWD74,550.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
- Shipping from April 28, 2027
Units | Per unit | Per Reel* |
|---|---|---|
| 5000 - 5000 | TWD14.20 | TWD71,000.00 |
| 10000 + | TWD13.80 | TWD69,000.00 |
*price indicative
- RS Stock No.:
- 249-6895
- Mfr. Part No.:
- IAUC80N04S6L032ATMA1
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IAUC | |
| Package Type | SuperSO8 5 x 6 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.20mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IAUC | ||
Package Type SuperSO8 5 x 6 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.20mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon IAUC Series MOSFET, 40V Maximum Drain‑Source Voltage, 80A Maximum Continuous Drain Current - IAUC80N04S6L032ATMA1
Features and Benefits:
• 80A continuous drain current supports substantial load currents
• 81W power dissipation allows sustained high‑power operation
• 80nC typical gate charge enables controlled switching performance
• 20V gate‑source tolerance protects against high gate excursions
Applications
• Ideal for high‑current motor driver stages in vehicles
• Used with power distribution modules requiring surface mounting
• Can be used for battery management and charging circuits
• Appropriate for thermally stressed environments up to high temperatures
What package type does it use for assembly on boards?
What temperature extremes can it withstand in operation?
How does it meet automotive qualification requirements?
Is the device compliant with environmental material restrictions?
What is the maximum allowed gate‑source voltage during use?
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