Infineon Half Bridge OptiMOS-TM6 Type N-Channel Power MOSFET, 60 A, 40 V Enhancement, 8-Pin SuperSO8 5 x 6
- RS Stock No.:
- 249-6892
- Mfr. Part No.:
- IAUC60N04S6N031HATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 2 units)*
TWD95.00
(exc. GST)
TWD99.76
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 3,970 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | TWD47.50 | TWD95.00 |
| 10 - 98 | TWD43.00 | TWD86.00 |
| 100 - 248 | TWD38.50 | TWD77.00 |
| 250 - 498 | TWD34.50 | TWD69.00 |
| 500 + | TWD29.50 | TWD59.00 |
*price indicative
- RS Stock No.:
- 249-6892
- Mfr. Part No.:
- IAUC60N04S6N031HATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | OptiMOS-TM6 | |
| Package Type | SuperSO8 5 x 6 | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 75W | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Half Bridge | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series OptiMOS-TM6 | ||
Package Type SuperSO8 5 x 6 | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 75W | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Half Bridge | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS is power MOSFET for automotive applications. Operating channel is N. It is AEC Q101 qualified. MSL1 up to 260°C peak reflow. Green Product (RoHS compliant) and it is 100% Avalanche tested.
175°C operating temperature
Related links
- Infineon Half Bridge OptiMOS-TM6 Type N-Channel Power MOSFET 40 V Enhancement, 8-Pin SuperSO8 5 x 6
- Infineon Half Bridge OptiMOS-TM6 Type N-Channel Power MOSFET 40 V N, 8-Pin SuperSO8 5 x 6
- Infineon Half Bridge OptiMOS-TM6 Type N-Channel Power MOSFET 40 V N, 8-Pin SuperSO8 5 x 6 IAUC60N04S6L030HATMA1
- Infineon Half Bridge IAUC60N04S6N050H Type N-Channel Power Transistor 40 V Enhancement, 8-Pin SuperSO8 5 x 6
- Infineon Half Bridge OptiMOSTM Type N-Channel Power Transistor 40 V Enhancement, 8-Pin SuperSO8 5 x 6
- Infineon Half Bridge IAUC45N04S6L063H Type N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO8 5 x 6
- Infineon OptiMOS-TM6 Type N-Channel MOSFET 40 V Enhancement, 12-Pin PG-TSON-12 IQFH36N04NM6ATMA1
- Infineon OptiMOS-TM6 Type N-Channel MOSFET 200 V Enhancement, 3-Pin PG-TO263-3 IPB339N20NM6ATMA1