STMicroelectronics STL N-Channel MOSFET, 55 A, 12 V Enhancement, 8-Pin PowerFLAT STL320N4LF8
- RS Stock No.:
- 248-4899
- Mfr. Part No.:
- STL320N4LF8
- Manufacturer:
- STMicroelectronics
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
TWD223.00
(exc. GST)
TWD234.16
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 448 unit(s) shipping from September 21, 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | TWD111.50 | TWD223.00 |
| 10 - 98 | TWD101.00 | TWD202.00 |
| 100 - 248 | TWD90.50 | TWD181.00 |
| 250 - 498 | TWD80.50 | TWD161.00 |
| 500 + | TWD74.00 | TWD148.00 |
*price indicative
- RS Stock No.:
- 248-4899
- Mfr. Part No.:
- STL320N4LF8
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | PowerFLAT | |
| Series | STL | |
| Mount Type | Through Hole | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Maximum Power Dissipation Pd | 188W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.9mm | |
| Standards/Approvals | UL | |
| Height | 1mm | |
| Length | 6mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type PowerFLAT | ||
Series STL | ||
Mount Type Through Hole | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Maximum Power Dissipation Pd 188W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Width 4.9mm | ||
Standards/Approvals UL | ||
Height 1mm | ||
Length 6mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics product is a N channel Power MOSFET that utilizes STripFET F8 technology featuring an enhanced trench gate structure. It ensures very low on state resistance while reducing internal capacitances and gate charge for faster and more efficient switching.
Used for switching applications
MSL1 grade
175 degree C operating temperature
100 percent avalanche tested
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