DiodesZetex Type N, Type P-Channel MOSFET, 3.1 A, 60 V Enhancement, 8-Pin SOIC DMHC6070LSD-13
- RS Stock No.:
- 246-7504
- Mfr. Part No.:
- DMHC6070LSD-13
- Manufacturer:
- DiodesZetex
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
TWD497.00
(exc. GST)
TWD521.80
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 2,320 unit(s) shipping from October 19, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | TWD49.70 | TWD497.00 |
| 50 - 90 | TWD48.50 | TWD485.00 |
| 100 - 240 | TWD47.40 | TWD474.00 |
| 250 - 990 | TWD46.50 | TWD465.00 |
| 1000 + | TWD45.20 | TWD452.00 |
*price indicative
- RS Stock No.:
- 246-7504
- Mfr. Part No.:
- DMHC6070LSD-13
- Manufacturer:
- DiodesZetex
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N, Type P | |
| Maximum Continuous Drain Current Id | 3.1A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.25Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.6W | |
| Typical Gate Charge Qg @ Vgs | 11.5nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N, Type P | ||
Maximum Continuous Drain Current Id 3.1A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.25Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.6W | ||
Typical Gate Charge Qg @ Vgs 11.5nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The DiodesZetex makes a new generation complementary MOSFET H-Bridge, that features low on-resistance achievable with low gate drive. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in SO-8 packaging. It offers fast switching and low input capacitance. It has working temperature range of -55°C to +150°C.
Maximum drain to source voltage is 60 V and maximum gate to source voltage is ±20 V 2 N-channel and 2 P-channels in a SOIC package It offers low on-resistance
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