DiodesZetex 2 Type N, Type P-Channel MOSFET, 4.6 A, 20 V Enhancement, 6-Pin SOT-363 DMC2710UDWQ-7
- RS Stock No.:
- 246-7498
- Mfr. Part No.:
- DMC2710UDWQ-7
- Manufacturer:
- DiodesZetex
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
TWD190.00
(exc. GST)
TWD199.50
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from May 31, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | TWD7.60 | TWD190.00 |
| 50 - 75 | TWD7.40 | TWD185.00 |
| 100 - 225 | TWD7.30 | TWD182.50 |
| 250 - 975 | TWD7.10 | TWD177.50 |
| 1000 + | TWD6.90 | TWD172.50 |
*price indicative
- RS Stock No.:
- 246-7498
- Mfr. Part No.:
- DMC2710UDWQ-7
- Manufacturer:
- DiodesZetex
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N, Type P | |
| Maximum Continuous Drain Current Id | 4.6A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-363 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 6V | |
| Maximum Power Dissipation Pd | 0.38W | |
| Typical Gate Charge Qg @ Vgs | 0.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N, Type P | ||
Maximum Continuous Drain Current Id 4.6A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-363 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 6V | ||
Maximum Power Dissipation Pd 0.38W | ||
Typical Gate Charge Qg @ Vgs 0.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The DiodesZetex makes a complementary pair enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in SOT363 packaging and 0.6mm profile makes it ideal for low profile applications . It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application.
Maximum drain to source voltage is 20 V Maximum gate to source voltage is ±6 V It offers a ultra-small package size Its thermally efficient package enables higher density end products
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