DiodesZetex Type N-Channel MOSFET, 99 A, 100 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 246-6866
- Mfr. Part No.:
- DMT10H9M9SCT
- Manufacturer:
- DiodesZetex
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Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 50 units)*
TWD1,710.00
(exc. GST)
TWD1,795.50
(inc. GST)
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Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | TWD34.20 | TWD1,710.00 |
| 100 - 450 | TWD33.40 | TWD1,670.00 |
| 500 - 950 | TWD32.50 | TWD1,625.00 |
| 1000 + | TWD31.80 | TWD1,590.00 |
*price indicative
- RS Stock No.:
- 246-6866
- Mfr. Part No.:
- DMT10H9M9SCT
- Manufacturer:
- DiodesZetex
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 99A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.016Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 1.73W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 31.24mm | |
| Length | 10.66mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 99A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.016Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 1.73W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 31.24mm | ||
Length 10.66mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex makes a new generation N-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain fast switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in TO220AB packaging. It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application.
Maximum drain to source voltage is 100 V and Maximum gate to source voltage is ±20 V It offers low on-resistance It has high BVDSS rating for power application It offers low input capacitance
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