Infineon IPD N-Channel MOSFET, 180 A, 75 V N, 3-Pin TO-252 IPD80R450P7ATMA1
- RS Stock No.:
- 244-8551
- Mfr. Part No.:
- IPD80R450P7ATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Subtotal (1 pack of 2 units)*
TWD202.00
(exc. GST)
TWD212.10
(inc. GST)
FREE delivery for orders over NT$1,300.00
- Shipping from September 06, 2027
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | TWD101.00 | TWD202.00 |
| 10 - 98 | TWD98.00 | TWD196.00 |
| 100 - 248 | TWD95.50 | TWD191.00 |
| 250 - 498 | TWD94.00 | TWD188.00 |
| 500 + | TWD92.50 | TWD185.00 |
*price indicative
- RS Stock No.:
- 244-8551
- Mfr. Part No.:
- IPD80R450P7ATMA1
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon IPD Series MOSFET, 75V Drain Source Voltage, 180A Continuous Drain Current - IPD80R450P7ATMA1
Features and Benefits:
• 180A continuous current supports heavy‑load switching
• 3mΩ low Rds(on) reduces conduction losses
• 81W power dissipation allows high‑power operation
• 80nC typical gate charge supports fast switching control
• 20V gate tolerance provides gate overvoltage protection
Applications
• Ideal for synchronous buck converter designs
• Used for high‑current motor drive stages
• Can be used for telecoms power distribution units
• Used with battery management and energy‑storage systems
What thermal extremes can it withstand?
How is it packaged for PCB assembly?
What gate drive considerations apply?
Does it comply with automotive reliability standards?
Are there environmental compliance details?
Related links
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