Infineon ISS Type P-Channel MOSFET, 180 mA, 60 V Enhancement, 3-Pin SOT-23
- RS Stock No.:
- 244-2277
- Distrelec Article No.:
- 304-40-557
- Mfr. Part No.:
- ISS55EP06LMXTSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 3000 units)*
TWD5,400.00
(exc. GST)
TWD5,670.00
(inc. GST)
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Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | TWD1.80 | TWD5,400.00 |
| 6000 - 6000 | TWD1.80 | TWD5,400.00 |
| 9000 + | TWD1.70 | TWD5,100.00 |
*price indicative
- RS Stock No.:
- 244-2277
- Distrelec Article No.:
- 304-40-557
- Mfr. Part No.:
- ISS55EP06LMXTSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 180mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | ISS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 180mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series ISS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon P-Channel Power MOSFET has a design flexibility and ease of handling to meet the highest performance requirements which include the -12V range of products that are ideally suited for battery protection, reverse polarity protection, linear battery chargers, load switched, DC-DC converters, and low voltage drive applications.
P-Channel
Low On-resistance RDS(on)
100% Avalanche tested
Logic level or normal level
Enhancement mode
Pb-free lead plating; RoHS compliant
Halogen-free according to IEC61249-2-21
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