Infineon IAUT N-Channel MOSFET, 120 A, 40 V Enhancement, 8-Pin TO-263 IAUT300N08S5N014ATMA1

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Subtotal (1 reel of 2000 units)*

TWD161,400.00

(exc. GST)

TWD169,480.00

(inc. GST)

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  • Shipping from April 30, 2027
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Units
Per unit
Per Reel*
2000 - 2000TWD80.70TWD161,400.00
4000 +TWD79.10TWD158,200.00

*price indicative

RS Stock No.:
244-0892
Mfr. Part No.:
IAUT300N08S5N014ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-263

Series

IAUT

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.4mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

1.1V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon MOSFET IAUT300N08S5N014ATMA1 Specifically designed for Automotive applications, this Cellular Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

N-channel - Enhancement mode

AEC qualified

MSL1 up to 260°C peak reflow

175°C operating temperature

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