Infineon BSZ N-Channel MOSFET, 212 A, 40 V N, 8-Pin SuperSO8 5 x 6 BSZ063N04LS6ATMA1
- RS Stock No.:
- 243-9312
- Mfr. Part No.:
- BSZ063N04LS6ATMA1
- Manufacturer:
- Infineon
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TWD164.00
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TWD172.20
(inc. GST)
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Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 5 - 5 | TWD32.80 | TWD164.00 | - |
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| 100 - 245 | TWD30.80 | TWD154.00 | 6% |
| 250 - 495 | TWD30.20 | TWD151.00 | 7% |
| 500 + | TWD29.40 | TWD147.00 | 10% |
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- RS Stock No.:
- 243-9312
- Mfr. Part No.:
- BSZ063N04LS6ATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 212A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | BSZ | |
| Package Type | SuperSO8 5 x 6 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 81W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 212A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series BSZ | ||
Package Type SuperSO8 5 x 6 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 81W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon BSZ Series MOSFET, 40V Maximum Drain Source Voltage, 212A Maximum Continuous Drain Current - BSZ063N04LS6ATMA1
This MOSFET is an N-channel power transistor designed for high-current switching in Compact surface-mount assemblies. It operates across a wide ambient temperature range and is suitable for applications requiring low conduction losses and substantial continuous current handling in a small package while complying with RoHS directives.
Features and Benefits:
• 0.7mΩ low on-resistance reduces conduction losses
• 212A continuous drain current enables heavy current handling
• 81W power dissipation supports high-power switching
• 40V drain-source rating allows medium-voltage applications
• 80nC typical gate charge enables predictable switching control
• 20V gate-source limit supports standard gate-drive voltages
• 212A continuous drain current enables heavy current handling
• 81W power dissipation supports high-power switching
• 40V drain-source rating allows medium-voltage applications
• 80nC typical gate charge enables predictable switching control
• 20V gate-source limit supports standard gate-drive voltages
Applications
• Suitable for high-current DC-DC converters in Compact power supplies
• Ideal for synchronous rectification in server power rails
• Used with motor drivers requiring robust surface-mount switches
• Can be used for battery management systems in high-load contexts
• Appropriate for power stages where low conduction loss matters
• Ideal for synchronous rectification in server power rails
• Used with motor drivers requiring robust surface-mount switches
• Can be used for battery management systems in high-load contexts
• Appropriate for power stages where low conduction loss matters
What mounting format does it use for PCB assembly?
It is supplied in an 8-pin SuperSO8 5x6 SMD package for surface mounting.
What thermal range can it withstand in operation?
It is rated to function between −55°C and 175°C without specification change.
How does gate drive affect switching performance?
Typical gate charge is 80nC, which determines drive current needed for the targeted switching speed.
Is it suitable for automotive specification requirements?
It does not carry an automotive standard designation and should be assessed against vehicle qualification needs.
What limitation should designers observe for gate voltage?
Gate-source voltage must not exceed 20V to avoid device stress.
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