Nexperia Type P-Channel MOSFET, 13.7 A, 20 V Enhancement, 8-Pin MLPAK33 PXP018-20QXJ
- RS Stock No.:
- 243-4883
- Mfr. Part No.:
- PXP018-20QXJ
- Manufacturer:
- Nexperia
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
TWD467.50
(exc. GST)
TWD491.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 2,900 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | TWD18.70 | TWD467.50 |
| 50 - 75 | TWD18.20 | TWD455.00 |
| 100 - 225 | TWD17.80 | TWD445.00 |
| 250 - 975 | TWD17.30 | TWD432.50 |
| 1000 + | TWD17.00 | TWD425.00 |
*price indicative
- RS Stock No.:
- 243-4883
- Mfr. Part No.:
- PXP018-20QXJ
- Manufacturer:
- Nexperia
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13.7A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | MLPAK33 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 13.6mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 81W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13.7A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type MLPAK33 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 13.6mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 81W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Nexperia P-channel enhancement mode field-effect transistor (FET) in an MLPAK33 (SOT8002) surface-mounted device (SMD) plastic package using Trench MOSFET technology.
Low threshold voltage
Trench MOSFET technology
High-side load switch
Battery management
DC-to-DC conversion
Switching circuits
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