Infineon IQE Type N-Channel MOSFET, 253 A, 30 V, 8-Pin PQFN IQE006NE2LM5ATMA1

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Subtotal (1 pack of 2 units)*

TWD130.00

(exc. GST)

TWD136.50

(inc. GST)

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Per unit
Per Pack*
2 - 8TWD65.00TWD130.00
10 - 98TWD64.00TWD128.00
100 - 248TWD63.00TWD126.00
250 - 498TWD61.00TWD122.00
500 +TWD60.00TWD120.00

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Packaging Options:
RS Stock No.:
242-0305
Mfr. Part No.:
IQE006NE2LM5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

253A

Maximum Drain Source Voltage Vds

30V

Package Type

PQFN

Series

IQE

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.2mΩ

Typical Gate Charge Qg @ Vgs

80nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

81W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.73V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Length

3.3mm

Automotive Standard

AEC-Q101

The Infineon OptiMOS 5 power transistor is a N channel MOSFET which has very low on resistance. It is fully qualified according to JEDEC for Industrial Applications.

100% avalanche tested

Superior thermal resistance

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