Infineon BSC0 N-Channel MOSFET, 381 A, 40 V N, 8-Pin TDSON BSC025N08LS5ATMA1
- RS Stock No.:
- 241-9966
- Mfr. Part No.:
- BSC025N08LS5ATMA1
- Manufacturer:
- Infineon
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- RS Stock No.:
- 241-9966
- Mfr. Part No.:
- BSC025N08LS5ATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 381A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TDSON | |
| Series | BSC0 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 381A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TDSON | ||
Series BSC0 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon BSC0 Series MOSFET, 40V Maximum Drain Source Voltage, 381A Maximum Continuous Drain Current - BSC025N08LS5ATMA1
This MOSFET is a high-current N-channel transistor designed for surface-mounted power switching in demanding thermal environments. It supports low-voltage, high-current applications and is intended for implementation where Compact TDSON packaging and wide operating temperatures are required.
Features and Benefits:
• Ultra-low on-resistance enables reduced conduction losses
• 381A continuous drain current supports heavy current loads
• 40V drain-source rating allows low-voltage power stages
• 81W power dissipation permits elevated power handling
• 80nC typical gate charge enables Faster switching transitions
• −55°C to +150°C range maintains operation across thermal extremes
• 381A continuous drain current supports heavy current loads
• 40V drain-source rating allows low-voltage power stages
• 81W power dissipation permits elevated power handling
• 80nC typical gate charge enables Faster switching transitions
• −55°C to +150°C range maintains operation across thermal extremes
Applications
• Suitable for high-current DC-DC converter designs
• Ideal for synchronous rectification in power supplies
• Used for motor control stages requiring 1.2V forward drop
• Can be used in server power distribution modules
• Suitable for surface-mount power assemblies on Compact boards
• Ideal for synchronous rectification in power supplies
• Used for motor control stages requiring 1.2V forward drop
• Can be used in server power distribution modules
• Suitable for surface-mount power assemblies on Compact boards
What mounting style is required for PCB assembly?
It is supplied in a TDSON package intended for surface-mount soldering onto PCB pads.
What gate voltage limits should be observed during operation?
The gate must not exceed 20V relative to the source to prevent gate overstress.
How does its forward voltage affect conduction at high currents?
The typical forward voltage is 1.2V, which contributes to junction heating under heavy load and should be considered in thermal design.
What approvals and environmental considerations apply?
It conforms to RoHS requirements restricting hazardous substances in the component.
What channel characteristics define switching polarity?
It employs an N-type conduction channel appropriate for low-side switching and common high-current topologies.
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